Temperature dependence of the tunneling current in metal-oxide-semiconductor devices due to the coupling between the longitudinal and transverse components of the electron thermal energy
The temperature dependence of the tunneling magnetoresistance (TMR) for magnetic tunneling junctions is investigated experimentally before and after the sample is annealed.
Temperature Dependence of Electron Tunneling between Two ... Although it is known that one-dimensional quantum electron tunneling lacks temperature dependence, ...
Temperature Dependence of the Tunneling Amplitude between Quantum Hall Edges Roberto D’Agosta,1,* Giovanni Vignale,1 and Roberto Raimondi2 1NEST-INFM and Department of Physics and Astronomy, University of Missouri - Columbia, 65211, Columbia, Missouri, USA
Full-Text Paper (PDF): Temperature Dependence of the Tunneling Amplitude between Quantum Hall Edges
PDF on ResearchGate | Based on the analysis of the Schrödinger equation, the coupling between the longitudinal and transverse components of the thermal energy of tunneling electrons gives a physical explanation of the temperature-dependent tunneling current.
1 Defect and Temperature Dependence of Tunneling in InAs/GaSb Heterojunctions Ryan M. Iutzi, Eugene A. Fitzgerald Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge,
By performing an atomistic transport calculation, we examine the temperature dependence of the tunneling current in a graphene nanoribbon band-to-band tunneling transistor.
Highlights We developed the temperature dependent model of direct tunneling leakage current. We developed the temperature dependent model of trap assisted tunneling current. The DT current is dominant over TAT above threshold voltage at various temperatures. The TAT current becomes dominant below threshold voltage at different temperatures. The ...
Quantum Tunneling in Chemical Reactions ... Temperature Independence 3. ... temp dependent tunneling region: curved, temp independent Arrhenius plot: ...
Purdue University Purdue e-Pubs Birck and NCN Publications Birck Nanotechnology Center 7-2013 Temperature-dependence of negative differential resistance in GaN/AlGaN resonant tunneling
Work function and temperature dependence of electron tunneling through an N-type perylene diimide molecular junction with isocyanide surface linkers
Abstract. Experimental results on the temperature dependence of a Be-- BeO-- Au tunneling structure are correlated with theoretical calculations.
The temperature dependence of the tunneling spectrum is calculated, and the low-bias peak is found to increase significantly at reduced temperature.
Tunneling Field Effect Transistors ... Temperature Dependence of Tunneling FETs. The temperature and voltage dependence of the GIDL effect in MOSFETs under low ...
Bias voltage and temperature dependence of magnetotunneling ... in the bias dependence of tunneling resistance and ... dependence ~room temperature! of ...
Field electron emission ... Nor is Schottky's explanation compatible with the experimental observation of only very weak temperature dependence ... For tunneling well ...
Temperature dependence of thermally activated ferromagnetic resonance (FMR) has been studied for two kinds of tunneling magnetoresistive (TMR) heads with a track width of about 100 nm.
A. Htiller: The Temperature Dependence of Rotational Tunneling 217 freedom. In Paragraph IV the rotating group is cou- pled to the motions of a threedimensional lattice
Abnormal Temperature Dependence of Tunneling Magnetoresistance for Magnetic Tunnel Junctions - Mangetic Tunnel Junction;Tunneling Magnetoresistance;